256KbX16 EDO DRAM product won the "Innovative Product Award" from the Hsinchu Science Park Administration.
Special Byte-wide 1Mb (64Kbx16) DRAM entered volume production.
Successfully developed 64Kbx8 SRAM.
Successfully completed the "National Sub-micron Project" led by the Ministry of Economics Affairs, which enables Taiwan to build self-owned 8-inch wafer technology for design and manufacturing, and facilitate growing investment in the semiconductor industry in Taiwan. Due to its contributions, Etron was given a number of awards by the Electronics Research and Service Organization (ERSO) of Industrial Technology Research Institute (ITRI).
Developed the first 16Mb DRAM by Chinese.
Developed the first 4Mb SRAM by Chinese.
32Kbx8 SRAM entered volume production.
Etron was founded in Hsincu Science-based Industrial Park, Taiwan. Pioneering Taiwan's "National Sub-micron Project," the company started developing the first 16Mb DRAM and 4Mb SRAM using 0.5μm process technology by Chinese.