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History Milestones

2016 ~ 20202011 ~ 20152006 ~ 20102001 ~ 20051996 ~ 20001991 ~ 1995

    January
  256Kbx16 DRAM product for graphics applications, using 0.6μm process technology, passed verification as the first EDO (Extended Data Output) DRAM developed by Taiwan.  
    October
  3.3V 32Kb×32 Pipeline Burst SRAM passed verification.   
    December
  256KbX16 EDO DRAM product won the "Innovative Product Award" from the Hsinchu Science Park Administration.   


    March
  Special Byte-wide 1Mb (64Kbx16) DRAM entered volume production.  
    July
  Successfully developed 64Kbx8 SRAM.  
    August
  Successfully completed the "National Sub-micron Project" led by the Ministry of Economics Affairs, which enables Taiwan to build self-owned 8-inch wafer technology for design and manufacturing, and facilitate growing investment in the semiconductor industry in Taiwan. Due to its contributions, Etron was given a number of awards by the Electronics Research and Service Organization (ERSO) of Industrial Technology Research Institute (ITRI).   


    May
  Developed the first 16Mb DRAM by Chinese.   
    July
  Developed the first 4Mb SRAM by Chinese.  


    October
  32Kbx8 SRAM entered volume production.  


    February
  Etron was founded in Hsincu Science-based Industrial Park, Taiwan. Pioneering Taiwan's "National Sub-micron Project," the company started developing the first 16Mb DRAM and 4Mb SRAM using 0.5μm process technology by Chinese.   
    November
  Developed the first 4Mb DRAM by Chinese.